Technical Documents

High Voltage Vertical GaN P-N Diodes with Avalanche Capability
High Voltage Vertical GaN P-N Diodes with Avalanche Capability
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Avalanche Capability of Vertical GaN p-n Junctions on Bulk GaN Substrates
Avalanche Capability of Vertical GaN p-n Junctions on Bulk GaN Substrates
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3.7 kV Vertical GaN PN Diodes
3.7 kV Vertical GaN PN Diodes
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1.5-kV and 2.2-m-cm2 Vertical GaN Transistors on Bulk-GaN Substrates
1.5-kV and 2.2-m-cm2 Vertical GaN Transistors on Bulk-GaN Substrates
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Reliability studies of vertical GaN devices based on bulk GaN substrates
Reliability studies of vertical GaN devices based on bulk GaN substrates
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Characterization of vertical GaN p–n diodes and junction field-effect transistors on bulk GaN down to cryogenic temperatures
Characterization of vertical GaN p–n diodes and junction field-effect transistors on bulk GaN down to cryogenic temperatures
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Breakthrough Short Circuit Robustness Demonstrated in Vertical GaN Fin JFET
Breakthrough Short Circuit Robustness Demonstrated in Vertical GaN Fin JFET
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Tuning Avalanche Path in Vertical GaN JFETs By Gate Driver Design
Tuning Avalanche Path in Vertical GaN JFETs By Gate Driver Design
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1.2 kV Vertical GaN Fin JFETs with Robust Avalanche and Fast Switching Capabilities
1.2 kV Vertical GaN Fin JFETs with Robust Avalanche and Fast Switching Capabilities
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1.2-kV Vertical GaN Fin-JFETs: High-Temperature Characteristics and Avalanche Capability
1.2-kV Vertical GaN Fin-JFETs: High-Temperature Characteristics and Avalanche Capability
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Surge Current and Avalanche Ruggedness of 1.2-kV Vertical GaN p-n Diodes
Surge Current and Avalanche Ruggedness of 1.2-kV Vertical GaN p-n Diodes
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Trap-Mediated Avalanche in Large-Area 1.2 kV Vertical GaN p-n Diodes
Trap-Mediated Avalanche in Large-Area 1.2 kV Vertical GaN p-n Diodes
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