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Exceptional Repetitive-Short-Circuit Robustness of Vertical GaN Fin-JFET at High Voltage Document Link

High Voltage Vertical GaN P-N Diodes with Avalanche Capability PDF document - sent via email

Avalanche Capability of Vertical GaN p-n Junctions on Bulk GaN Substrates PDF document - sent via email

3.7 kV Vertical GaN PN Diodes PDF document - sent via email

1.5-kV and 2.2-m-cm2 Vertical GaN Transistors on Bulk-GaN Substrates PDF document - sent via email

Reliability studies of vertical GaN devices based on bulk GaN substrates PDF document - sent via email

Characterization of vertical GaN p–n diodes and junction field-effect transistors on bulk GaN down to cryogenic temperatures PDF document - sent via email

Breakthrough Short Circuit Robustness Demonstrated in Vertical GaN Fin JFET Document Link

Tuning Avalanche Path in Vertical GaN JFETs By Gate Driver Design Document Link

1.2 kV Vertical GaN Fin JFETs with Robust Avalanche and Fast Switching Capabilities Document Link

1.2-kV Vertical GaN Fin-JFETs: High-Temperature Characteristics and Avalanche Capability Document Link

Surge Current and Avalanche Ruggedness of 1.2-kV Vertical GaN p-n Diodes Document Link

Trap-Mediated Avalanche in Large-Area 1.2 kV Vertical GaN p-n Diodes Document Link