NexGen Vertical GaN® junction field effect transistors (JFETs) are made from gallium nitride (GaN). They use a vertical GaN-on-GaN device structure which delivers high switching frequencies at blocking voltages from 700V to 1200V and higher. These devices have very low conduction and switching losses enabling systems with higher efficiencies. Thus, making it an ideal power semiconductor for applications from LED Lighting and Computing to Data Centers and Electric Vehicles

Please fill out this Sample Request form if you are interested in the device samples. What you will receive:

  • Engineering Sample of NXGEA120R060 Device
  • Advance Datasheet

The NexGen Sales Team will review your request and contact you within 48 hours.