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Join Shahin Sharifzadeh at Bodo’s WBG Event 2022 for an interactive session on the future of power electronics, NexGen Vertical GaN®

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Join Shahin Sharifzadeh at Bodo’s WBG Event 2022 for an interactive session on the future of power electronics, NexGen Vertical GaN®

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The world's first 700V and 1200V Vertical GaN semiconductors are available to customers!

Home NexGen Vertical GaN®

NexGen Vertical GaN® enhancement junction field-effect transistors (eJFET) use a vertical GaN-on-GaN device architecture at rated voltages from 700 V to 1200 V and higher. NexGen Vertical GaN® enables higher switching frequencies for smaller form factors and high efficiency with low system losses. The vertical device construction effectively decouples rated voltage from the device area, creating high voltage devices carrying large currents. With very small die sizes, these devices exhibit best-in-class performance with superior switching Figure-of-Merits (FoMs) with the lowest conduction and switching losses compared to competing technologies. In addition, they are avalanche rugged and have high short circuit withstand times, enabling highly reliable systems.

NexGen Vertical GaN® offers several advantages in a wide variety of applications including automotive EV power conversion systems, data center power supplies, industrial motor drives, LED lighting, solar energy systems, AC/DC power supplies for consumer application etc.,

Product Selector

MPN Rated Voltage RDS(ON) typ at TJ = 25°C Current rating: ID max at TC=25°C Maximum Junction Temperature (TJ) Package Contact
NXGEA070R1K0 700 V 1000 mΩ 2.6 A 125°C DFN 5x6 Contact for details
NXGEA070R140 700 V 140 mΩ 10 A 150°C DFN 8x8 Contact for details
NXGEA070R040 700 V 40 mΩ 35 A 150°C DFN 8x8 Contact for details
NXGEA120R1K0 1200 V 1000 mΩ 3 A 150°C DFN 8x8 Contact for details
NXGEA120R060 1200 V 60 mΩ 35 A 150°C DFN 8x8 Contact for details

Evaluation Boards​

NXGDPT01SE120V-100​

NexGen Vertical GaN Double Pulse Evaluation Platform Single-Ended Topology

Features

• 1200 V, 100 A
• Single-Ended Topology uses 1x GaN FET and 1x diode
• On-board source sense resistor
• On-board isolated DC-DC converters
• Low Resistance and Inductance Gate Drive Connection

NXGDPT01HB120V-100

NexGen Vertical GaN Double Pulse Evaluation Platform Half-Bridge Topology

Features

• 1200 V, 100 A
• Half-Bridge Topology uses 2x GaN FETs
• On-board source sense Resistor
• On-board isolated DC-DC converters
• Low Resistance and Inductance Gate Drive Connection

Resources