The world's first 700V and 1200V Vertical GaN semiconductors are available to customers!
- Overview
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- Evaluation Boards
- Resources
NexGen Vertical GaN® enhancement junction field-effect transistors (eJFET) use a vertical GaN-on-GaN device architecture at rated voltages from 700 V to 1200 V and higher. NexGen Vertical GaN® enables higher switching frequencies for smaller form factors and high efficiency with low system losses. The vertical device construction effectively decouples rated voltage from the device area, creating high voltage devices carrying large currents. With very small die sizes, these devices exhibit best-in-class performance with superior switching Figure-of-Merits (FoMs) with the lowest conduction and switching losses compared to competing technologies. In addition, they are avalanche rugged and have high short circuit withstand times, enabling highly reliable systems.
NexGen Vertical GaN® offers several advantages in a wide variety of applications including automotive EV power conversion systems, data center power supplies, industrial motor drives, LED lighting, solar energy systems, AC/DC power supplies for consumer application etc.,
Product Selector
MPN | Rated Voltage | RDS(ON) typ at TJ = 25°C | Current rating: ID max at TC=25°C | Maximum Junction Temperature (TJ) | Package | Contact |
NXGEA070R1K0 | 700 V | 1000 mΩ | 2.6 A | 125°C | DFN 5x6 | Contact for details |
NXGEA070R140 | 700 V | 140 mΩ | 10 A | 150°C | DFN 8x8 | Contact for details |
NXGEA070R040 | 700 V | 40 mΩ | 35 A | 150°C | DFN 8x8 | Contact for details |
NXGEA120R1K0 | 1200 V | 1000 mΩ | 3 A | 150°C | DFN 8x8 | Contact for details |
NXGEA120R060 | 1200 V | 60 mΩ | 35 A | 150°C | DFN 8x8 | Contact for details |
Evaluation Boards
NXGDPT01SE120V-100
NexGen Vertical GaN Double Pulse Evaluation Platform Single-Ended Topology

Features
• 1200 V, 100 A
• Single-Ended Topology uses 1x GaN FET and 1x diode
• On-board source sense resistor
• On-board isolated DC-DC converters
• Low Resistance and Inductance Gate Drive Connection
NXGDPT01HB120V-100
NexGen Vertical GaN Double Pulse Evaluation Platform Half-Bridge Topology

Features
• 1200 V, 100 A
• Half-Bridge Topology uses 2x GaN FETs
• On-board source sense Resistor
• On-board isolated DC-DC converters
• Low Resistance and Inductance Gate Drive Connection
Resources
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- Application Notes
- White Papers
- Technical Document
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