The world's first 700V and 1200V Vertical GaN semiconductors are available to customers!

NexGen Vertical GaN® enhancement junction field-effect transistors (eJFET) use a vertical GaN-on-GaN device architecture at rated voltages from 700 V to 1200 V and higher. NexGen Vertical GaN® enables higher switching frequencies for smaller form factors and high efficiency with low system losses. The vertical device construction effectively decouples rated voltage from the device area, creating high voltage devices carrying large currents. With very small die sizes, these devices exhibit best-in-class performance with superior switching Figure-of-Merits (FoMs) with the lowest conduction and switching losses compared to competing technologies. In addition, they are avalanche rugged and have high short circuit withstand times, enabling highly reliable systems.