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Technical Documentation

NexGen Power Systems Inc. acquired Avogy’s intellectual property, including patents. These papers are intended to share valuable information on subjects that are important to the power electronic systems industry.

High Voltage Vertical GaN P-N Diodes with Avalanche Capability

Technical
Paper

High Voltage Vertical GaN P-N Diodes with Avalanche Capability

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Vertical Power Diodes in Bulk GaN

Technical
Paper

Vertical Power Diodes in Bulk GaN

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Vertical Power p-n Diodes Based on Bulk GaN

Technical
Paper

Vertical Power p-n Diodes Based on Bulk GaN

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High Voltage Vertical GaN p-n Diodes With Avalanche Capability

Technical
Paper

High Voltage Vertical GaN p-n Diodes With Avalanche Capability

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Avalanche Capability of Vertical GaN p-n Junctions on Bulk GaN Substrates

Technical
Paper

Avalanche Capability of Vertical GaN p-n Junctions on Bulk GaN Substrates

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3.7 kV Vertical GaN PN Diodes

Technical
Paper

3.7 kV Vertical GaN PN Diodes

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1.5-kV and 2.2-m-cm2 Vertical GaN Transistors on Bulk-GaN Substrates

Technical
Paper

1.5-kV and 2.2-m-cm2 Vertical GaN Transistors on Bulk-GaN Substrates

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Reliability studies of vertical GaN devices based on bulk GaN substrates

Technical
Paper

Reliability studies of vertical GaN devices based on bulk GaN substrates

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Vertical Devices In Bulk GaN Drive Diode Performance To Near-Theoretical Limits

Technical
Paper

Vertical Devices In Bulk GaN Drive Diode Performance To Near-Theoretical Limits

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Characterization of vertical GaN p–n diodes and junction field-effect transistors on bulk GaN down to cryogenic temperatures

Technical
Paper

Characterization of vertical GaN p–n diodes and junction field-effect transistors on bulk GaN down to cryogenic temperatures

Knowledge Center

Technical Documentation

High Voltage Vertical GaN P-N Diodes with Avalanche Capability

Vertical Power Diodes in Bulk GaN

Vertical Power p-n Diodes Based on Bulk GaN

High Voltage Vertical GaN p-n Diodes With Avalanche Capability

Avalanche Capability of Vertical GaN p-n Junctions on Bulk GaN Substrates

3.7 kV Vertical GaN PN Diodes

1.5-kV and 2.2-m-cm2 Vertical GaN Transistors on Bulk-GaN Substrates

Reliability studies of vertical GaN devices based on bulk GaN substrates

Vertical Devices In Bulk GaN Drive Diode Performance To Near-Theoretical Limits

Characterization of vertical GaN p–n diodes and junction field-effect transistors on bulk GaN down to cryogenic temperatures

Robustness of Vertical GaN™: Update on Avalanche and Short Circuit Tests