NexGen Power Systems Inc. acquired Avogy’s intellectual property, including patents. These papers are intended to share valuable information on subjects that are important to the power electronic systems industry.
GaN is Great, True GaN is Better!
GaN is Great, True GaN is Better!
1.5-kV and 2.2-m-cm2 Vertical GaN Transistors on Bulk-GaN Substrates
1.5-kV and 2.2-m-cm2 Vertical GaN Transistors on Bulk-GaN Substrates
Making small, safe and elegant power supplies
Making small, safe and elegant power supplies
Vertical Power Diodes in Bulk GaN
Vertical Power Diodes in Bulk GaN
Vertical Power p-n Diodes Based on Bulk GaN
Vertical Power p-n Diodes Based on Bulk GaN
High Voltage Vertical GaN p-n Diodes With Avalanche Capability
High Voltage Vertical GaN p-n Diodes With Avalanche Capability
Avalanche Capability of Vertical GaN p-n Junctions on Bulk GaN Substrates
Avalanche Capability of Vertical GaN p-n Junctions on Bulk GaN Substrates
3.7 kV Vertical GaN PN Diodes
3.7 kV Vertical GaN PN Diodes
1.5-kV and 2.2-m-cm2 Vertical GaN Transistors on Bulk-GaN Substrates
1.5-kV and 2.2-m-cm2 Vertical GaN Transistors on Bulk-GaN Substrates
Reliability studies of vertical GaN devices based on bulk GaN substrates
Reliability studies of vertical GaN devices based on bulk GaN substrates
Vertical Devices In Bulk GaN Drive Diode Performance To Near-Theoretical Limits
Vertical Devices In Bulk GaN Drive Diode Performance To Near-Theoretical Limits
Characterization of vertical GaN p–n diodes & junction field-effect transistors on bulk GaN down to cryo temperatures
Characterization of vertical GaN p–n diodes & junction field-effect transistors on bulk GaN down to cryo temperatures