Knowledge Center
Technical Documentation
NexGen Power Systems Inc. acquired Avogy’s intellectual property, including patents. These papers are intended to share valuable information on subjects that are important to the power electronic systems industry.
High Voltage Vertical GaN P-N Diodes with Avalanche Capability
Technical
Paper
Paper
High Voltage Vertical GaN P-N Diodes with Avalanche Capability
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Vertical Power Diodes in Bulk GaN
Technical
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Paper
Vertical Power Diodes in Bulk GaN
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Vertical Power p-n Diodes Based on Bulk GaN
Technical
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Paper
Vertical Power p-n Diodes Based on Bulk GaN
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High Voltage Vertical GaN p-n Diodes With Avalanche Capability
Technical
Paper
Paper
High Voltage Vertical GaN p-n Diodes With Avalanche Capability
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Avalanche Capability of Vertical GaN p-n Junctions on Bulk GaN Substrates
Technical
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Paper
Avalanche Capability of Vertical GaN p-n Junctions on Bulk GaN Substrates
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3.7 kV Vertical GaN PN Diodes
Technical
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Paper
3.7 kV Vertical GaN PN Diodes
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1.5-kV and 2.2-m-cm2 Vertical GaN Transistors on Bulk-GaN Substrates
Technical
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Paper
1.5-kV and 2.2-m-cm2 Vertical GaN Transistors on Bulk-GaN Substrates
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Reliability studies of vertical GaN devices based on bulk GaN substrates
Technical
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Paper
Reliability studies of vertical GaN devices based on bulk GaN substrates
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Vertical Devices In Bulk GaN Drive Diode Performance To Near-Theoretical Limits
Technical
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Paper
Vertical Devices In Bulk GaN Drive Diode Performance To Near-Theoretical Limits
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Characterization of vertical GaN p–n diodes and junction field-effect transistors on bulk GaN down to cryogenic temperatures
Technical
Paper
Paper
Characterization of vertical GaN p–n diodes and junction field-effect transistors on bulk GaN down to cryogenic temperatures
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