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JapaneseNexGen Syracuse FAB 1 World’s only advanced fab dedicated to Vertical GaN
State-of-the-art fab draws on NexGen’s early GaN-on-GaN innovation.
This facility draws on NexGen’s history of GaN innovation and ability to achieve higher performance benefits by leveraging core competency and leadership in semiconductors, power system design, manufacturing, and quality. We are proud that NexGen is accelerating the return of high-tech manufacturing to the US.
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66,000 Square feet on 14 acres
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20,000 Square feet cleanroom
State-of-the-art tools for GaN epitaxial growth, materials characterization, device design and processing, electrical characterization, reliability testing, and product development.
NexGen’s fabrication facility is configured to process 4” to 8” GaN wafers with an expected annual device capacity of 1+ billion units.
Join us.
Join the problem solvers building a new generation of innovative NexGen Vertical GaN® based systems that’s enabling the next generation of power electronics.
