Technical Document Characterization of Vertical GaN™ P-N Diodes and Junction Field-Effect Transistors on Bulk GaN Down to Cryogenic Temperatures

NexGen’s Vertical GaN™ provides superior robustness

In this technical document we discuss:

• Characterization of Vertical GaN™ down to cryogenic temperatures
• Growth and fabrication of these devices
• Measurement and characterization of these devices