Technical Document 1.5-kV and 2.2-mΩ-cm² Vertical GaN™ Transistors on Bulk-GaN Substrates

NexGen’s Vertical GaN™ power transistors delivering a new benchmark in power electronics

In this technical document we discuss:

• NexGen’s Vertical GaN™ power transistors with breakdown voltages of 1.5kV and specific ON-resistance of 2.2-mΩ-cm²
• Growth and fabrication of these devices
• Measurement and characterization of these devices