NexGen Power Systems Inc. acquired Avogy’s intellectual property, including patents. These papers are intended to share valuable information on subjects that are important to the power electronic systems industry.

 

GaN is Great, True GaN is Better!

GaN is Great, True GaN is Better!

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Technical Paper

1.5-kV and 2.2-m-cm2 Vertical GaN Transistors on Bulk-GaN Substrates

1.5-kV and 2.2-m-cm2 Vertical GaN Transistors on Bulk-GaN Substrates

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Technical Paper

Making small, safe and elegant power supplies

Making small, safe and elegant power supplies

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Technical Paper

Vertical Power Diodes in Bulk GaN

Vertical Power Diodes in Bulk GaN

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Technical Paper

Vertical Power p-n Diodes Based on Bulk GaN

Vertical Power p-n Diodes Based on Bulk GaN

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Technical Paper

High Voltage Vertical GaN p-n Diodes With Avalanche Capability

High Voltage Vertical GaN p-n Diodes With Avalanche Capability

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Technical Paper

Avalanche Capability of Vertical GaN p-n Junctions on Bulk GaN Substrates

Avalanche Capability of Vertical GaN p-n Junctions on Bulk GaN Substrates

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Technical Paper

3.7 kV Vertical GaN PN Diodes

3.7 kV Vertical GaN PN Diodes

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Technical Paper

1.5-kV and 2.2-m-cm2 Vertical GaN Transistors on Bulk-GaN Substrates

1.5-kV and 2.2-m-cm2 Vertical GaN Transistors on Bulk-GaN Substrates

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Technical Paper

Reliability studies of vertical GaN devices based on bulk GaN substrates

Reliability studies of vertical GaN devices based on bulk GaN substrates

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Technical Paper

Vertical Devices In Bulk GaN Drive Diode Performance To Near-Theoretical Limits

Vertical Devices In Bulk GaN Drive Diode Performance To Near-Theoretical Limits

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Technical Paper

Characterization of vertical GaN p–n diodes & junction field-effect transistors on bulk GaN down to cryo temperatures

Characterization of vertical GaN p–n diodes & junction field-effect transistors on bulk GaN down to cryo temperatures

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Technical Paper